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MRF5S21045NR1 MRF5S21045NBR1
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for W--CDMA base station applications with frequencies from 2110
to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.
To be used in Class AB for PCN--PCS/cellular radio and WLL applications.
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Typical 2--Carrier W--CDMA Performance: VDD
=28Volts,IDQ
= 500 mA,
Pout
= 10 Watts Avg., f = 2112.5 MHz, Channel Bandwidth = 3.84 MHz,
PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain ? 14.5 dB
Drain Efficiency ? 25.5%
IM3 @ 10 MHz Offset ? --37 dBc in 3.84 MHz Channel Bandwidth
ACPR @ 5 MHz Offset ? --39 dBc in 3.84 MHz Channel Bandwidth
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Capable of Handling 5:1 VSWR, @ 28 Vdc, 2140 MHz, 45 Watts CW
Output Power
Features
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Characterized with Series Equivalent Large--Signal Impedance Parameters
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Internally Matched for Ease of Use
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Qualified Up to a Maximum of 32 VDD
Operation
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Integrated ESD Protection
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200°C Capable Plastic Package
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N Suffix Indicates Lead--Free Terminations. RoHS Compliant.
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In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
--0.5, +68
Vdc
Gate--Source Voltage
VGS
--0.5, +15
Vdc
Total Device Dissipation @ TC
=25°C
Derate above 25°C
PD
130
0.74
W
W/°C
Storage Temperature Range
Tstg
-- 65 to +150
°C
Operating Junction Temperature
TJ
200
°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value
(1,2)
Unit
Thermal Resistance, Junction to Case
Case Temperature 80°C, 45 W CW
Case Temperature 79°C, 10 W CW
RθJC
1.35
1.48
°C/W
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
2. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
LIFETIME BU
Y
LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12
Document Number: MRF5S21045N
Rev. 4.1, 12/2009
Freescale Semiconductor
Technical Data
MRF5S21045NR1
MRF5S21045NBR1
2110--2170 MHz, 10 W AVG., 28 V
2xW--CDMA
LATERAL N--CHANNEL
RF POWER MOSFETs
CASE 1484--04, STYLE 1
T O -- 2 7 2 W B -- 4
PLASTIC
MRF5S21045NBR1
CASE 1486--03, STYLE 1
T O -- 2 7 0 W B -- 4
PLASTIC
MRF5S21045NR1
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Freescale Semiconductor, Inc., 2008--2009.
All rights reserved.
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